M07000 - SEMI M70 - Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness StdPbc-0912

M07000 - SEMI M70 - Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness StdPbc-0912Wafer near edge geometry can significantly affect the yield of semiconductor device processing. Knowledge of near edge geometrical properties can help the producer and consumer to determine if the dimensional characteristics of a wafer satisfy given geometrical requirements. This Test Method is suitable quantifying the near edge geometry of wafers used in semiconductor device processing. The PSFQR or PSFQD metric is suitable for quantifying near edge

Measurements made at the three positions specified in this Guide do not provide complete information about the roundness of the wafer

Such impurities may be introduced into the wafer during manufacture or during various processing steps

It is essentially an online version of the Excel-based fab database that is updated with greater frequency with a user-friendly interface

as well as internal buffer equipment carrier transfers

buffer oxide etchants

SEMI E80-0299 (first published)

In addition to the interviews

SEMI E4 — Specification for SEMI Equipment Communications Standard 1 Message Transfer (SECS-I)

The Guide focuses on analysis of HPIX resin used in UPW

SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

Referenced SEMI Standards (purchase separately)

and their customers in evaluating leadframe tapes