MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 SEMI S16 — Guide for

SEMI S16 — Guide for Semiconductor Manufacturing Equipment Design for Reduction of Environmental Impact at End of Life

This edition was approved for publication by the global Audits and Reviews Subcommittee on April 30

an asphyxiant gas

2 grade nitrogen and argon bulk supply gases

This Document does not address the transmission

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 SEMI S16 — Guide forThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for