Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating instead loading sample directly inside

instead loading sample directly inside tube

Set pressure low limit and high limit on digital pressure gauge

1 sides polished

2 side polished

MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating instead loading sample directly insideFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 25(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic