GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP Thin Film from A-Z

Thin Film from A-Z

or polishing pad

Resistivity:                  >50  Ohms/cm (If you would like to measure the resistivity accurately

Dielectric constants

Model Number EQ-Die-28D-B Maximum Load 30 metric Ton (at room temperature)

GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP Thin Film from A-ZGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Research Grade Sizes 2 Round Dimensions 50mm + 2mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Conduction Type: n type, Resistivity > 1E6 Ohm cm Front