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Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm CdTe Doped Zn (CZT) Inductively Coupled Plasma Na (ppm)
Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm CdTe Doped Zn (CZT) Inductively Coupled Plasma Na (ppm)
$108.16
Description
Inductively Coupled Plasma Na (ppm)
Min Air Set
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94mm Flatness = 0
Please use a Forklift to move in or out from the glovebox
Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm CdTe Doped Zn (CZT) Inductively Coupled Plasma Na (ppm)Single crystal Si, (CZ) Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 2 mm Orientation: <100 > + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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