InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal Reactors 9 mpa Compressive Strength 18500

9   mpa   Compressive Strength 18500   psi 127

Orientation:                 (111) A +/-1 degree

Res: 1-10 ohm-cm

Growing Method:               VGF

you should firstly groove it by MSK-500 and then crimp it by MSK-510 with CR123 die

InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal Reactors 9 mpa Compressive Strength 18500InP single crystal wafer Orientation: (111)B Size: 2" diameter x 0. 35mm Doping: undoped Conducting type: N Type, Semi Conducting Resistivity: (2 5)E 1 ohm. cm Carrier Concentration:(3. 0 6. 0)E15 c. c. Mobility: 3900 4570cm^2 v. s Polish: one side polished Ra(Average Roughness) : < 0. 4 nm EPD: N A EPI ready surface and packing