LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation Whole set pressing die includes

Whole set  pressing die includes One 0

Syringe (1 unit)

Winding Speed 0 - 250 RPM Adjustable

One is for cutting 57 mm x 44 mm Cathode electrode sheet and the other one is for cutting 58 mm x 45 mm Anode sheet

Conductivity type                                               P type

LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation Whole set pressing die includesLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.