LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces 96) x 10^18/cm^3

96) x 10^18/cm^3

3 11a (RID/ADR)

Formation conditions: 25°C

(+/-05o) with Standard Flat

and 1/8 NPS valve with installed Mechanical Pressure Gauge

LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces 96) x 10^18/cm^3LSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with a perovskite structure and is twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at a lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive