Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 Silicon Nitride (Si3N4) Substrate

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 Silicon Nitride (Si3N4) SubstrateSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument Size: 50. 8 diameter + 0. 5 mm x 0. 28 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A

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05 % Coulometric KF Titrator Tap Density (g/cm3)

Compliance  CE Certified Warranty One year limited with lifetime support

Consumable parts like silicone O-rings are not covered by the warranty

Dimensions Furnace: 520Lx 380Wx 310H (mm)

Printed Grid Area:                        6 x6 (100 Grid)

pressing die set made of 316 stainless steel

Resistivity:                                 1015 W

5" diameter shaft

Orientation:   (110)

Working voltage AC 110~220V

Edge orietation Indication:   <001> +/-2°