GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, Tube Furnaces Composition: Al2O3 ceramic

Composition:     Al2O3  ceramic

Output 0-260V   /     0-520V   (3/4 Phase+ G) 40-70 Hz The Max Current Per Phase: 125A/62

Structure:                         Cubic

standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating

5Mpa (the cap will open to release high pressure inside if over 2

GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, Tube Furnaces Composition: Al2O3 ceramicGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5x5x0. 5mm Polishing: One side polished Doping: undoped Conductor type: SI, Semi Insulating Resistivity: (0. 1 3. 24 )x 10^8 Ohm. cm Mobility: 4500 5630 cm^2 V. S EPD: <5000 cm^ 2