High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) Crystal growth method

Crystal growth method

You may use lab press and dry pressing die below to prepare an electrode pellet instead of using electrode coated Al or Cu foil

because it has a lapped glass surface and < flatness of +/- 2 microns

EPI Film :

Optional:    Rotating heater with speed (0 - 5 RPM) is available upon request at extra cost

High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) Crystal growth methodSpecifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1 x 10 6 Dimension: 50 OD x 38 ID x 1000 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the