3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 000 PSI adjust relief valve – generalp.com.au

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Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 000 PSI adjust relief valve

$9457.00

Quantity
Description

000 PSI adjust relief valve is available upon request

Stainless steel torsion clips hold the bonnet assembly firmly in place and allow quick access for maintenance cycles

Surface Roughness:   Fine ground

Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A

005 Cu (wt%) <0

Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 000 PSI adjust relief valveSuch unpolished Aluminum Nitride can be placed in the center of holder for holding test samples up to 3" or 5" diam. The excellent temperature uniformity can be achieved in this 3" or 5" diam. area due to the benefit from its high thermal conductivity. Aluminum Nitride Ceramic Substrates Properties Item No. AIN Holder Purity (wt%) 99% (AN5116) Density (g cm3) >3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric

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