GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 85 for the CMC with

85 for the CMC with viscosity of 3500-5500 cps

Surface Quality: 80/50

01 -3000PPM ) with KF40 Connector Humidity & Oxygen Purifying system < 1 ppm)

you must check the substrate by XRD before growing the film

2500 ~ 3500

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 85 for the CMC withGaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>