SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated Glass

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated GlassSpecifications: Film: SiC Epi film with 3C structure grown by PECVD Thickness: 1. 0um + 10% Orientation: 3C SiC (111) Surface: CMP film chemical mechanical polished with Ra < 10 Angstrom Type and dopant: N type, Undoped Surface defects density (microscopic inspection of crystallites or other macro defects) <= 3E3cm^2 TTV 5 29 Bow 9 ~ 3 Silicon substrate: Size: 10x10 x 1. 0 mm thickness Orientation: (111) Type: N type P doped Resistivity: 1 10 ohm. cm

Resistivity:                        ( 0

Mobility:                                                 2180-2190 cmE2/V

& Impurity

and operates inside a glovebox with Ar gas

EPD                                                     <15000 / cm 2

(110V version is available with a 3000W transformer Motor Power AC Motor with 1

Size:                      10 x10 x 0

78 kg Force

Wafer size:   10 x 3 x 0

natural defects

Availabilty Only available as repair part for MTI's MSK-110

Shiny Side Roughness (RZ): 1