GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp In ( ohm-cm )
$171.35
Description
( ohm-cm )
76 Array (Capacity): 3*3=9
The testing software (TC5
Loss Tangent at 10 GHz: < 2x10-5 at A axis
Size: 10x10x0
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp In ( ohm-cm )GaAs single crystal wafer Growing Method: Orientation: (110) Flat: PF<110> SF <100> Size: 5x5x5. 5 5. 6mm Polishing: Two sides polished Doping: un doped Conductor type: S I Mobility: 4800 cm^2 V. S Resistivity :(1 9)x10^17 ohm. cm Carrier Concentration: 1. 3x10^7 cm^ 3 EPD: 1x10^4 cm^ 2 Ra(Average Roughness) : < 5 Angstrom (RMS) Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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